Scientific Output
Academic publications
Dr. Hisham NASSER publications authored by · Show all
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ArticleCompositional analysis of (p) a-SiCx:H emitter layers for enhanced short-circuit current density in SHJ solar cells
Materials Science in Semiconductor Processing doi:https://doi.org/10.1016/j.mssp.2026.110912
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ArticleIntrinsic amorphous silicon bilayers for surface passivation in silicon heterojunction solar cells
Surfaces and Interfaces doi:10.1016/j.surfin.2026.108821
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ArticleHydrogenated Aluminum Doped Zinc Oxide as Highly Transparent and Passivating Indium-Free Recombination Junction for TOPCon-Based Bottom Cell
Materials Science, Mesoscale and Nanoscale Physics doi:https://doi.org/10.48550/arXiv.2510.17694
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ArticleInterface properties study of black silicon solar cells with front surface a-Si:H/c-Si heterojunction
Journal of Physics D: Applied Physics doi:10.1088/1361-6463/ad8a6d
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ArticleIndustrial PERC Solar Cells with Fully Passivated Rear Contact Enabled by Local Hole-Selective MoOx/Ag
ACS Applied Energy Materials doi:10.1021/acsaem.4c03001
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ArticleLocal p + Poly-Si Passivating Contacts Realized by Direct FlexTrail Printing of Boron Ink and Selective Alkaline Etching for High Efficiency TOPCon Based Solar Cells
Progress in Photovoltaics: Research and Applications doi:10.1002/pip.3901
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ArticleRole of ionic crystals as interfacial layers in metal-semiconductor junction
Applied Research doi:10.1002/appl.202400028
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ArticleHydrogen thermal activation of defects enabling firing stable Poly-Si based passivating contacts for TOPCon solar cells
Solar Energy doi:10.1016/j.solener.2024.112838
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ArticleTCAD simulation of germanium-based heterostructure solar cell employing molybdenum oxide as a hole-selective layer
Modelling and Simulation in Materials Science and Engineering doi:10.1088/1361-651X/ad5b7b
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ArticlePhotovoltaic Response of Liquid Phase Exfoliated Graphene- MoS2 Heterostructures
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN doi:10.7566/JPSJ.93.084801
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ArticleAnnealing-free, electron-selective ohmic contacts using zirconium oxide and aluminum for n-type crystalline silicon solar cells
Materials Science in Semiconductor Processing doi:10.1016/j.mssp.2024.108310
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ArticleAnalysis on the capacitance-voltage characteristics of metal-insulator-semiconductor capacitors based on thermally evaporated WO x on n- and p- type crystalline silicon
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS doi:10.1016/j.mseb.2024.117379
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ArticleDevelopment of a selective wet-chemical etchant for precise 3D sculpting of silicon enabled by infrared non-linear laser modification
Optics and Laser Technology doi:10.1016/j.optlastec.2024.111022
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ArticleAnalysis on the Capacitance-Voltage Characteristics of Metal-Insulator-Semiconductor Capacitors Based on Thermally Evaporated Wox on N- and P- Type Crystalline Silicon
SSRN doi:10.2139/ssrn.4040422
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ArticleFourteen percent efficiency ultrathin silicon solar cells with improved infrared light management enabled by hole-selective transition metal oxide full-area rear passivating contacts
Progress in Photovoltaics: Research and Applications doi:10.1002/pip.3510
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Conference paper14% Efficiency Ultrathin Silicon Solar Cells with Improved Infrared Light Management Enabled by Hole-Selective Transition Metal Oxide Full-Area Rear Passivating Contacts
38th European Photovoltaic Solar Energy Conference and Exhibition doi:10.4229/EUPVSEC20212021-2EO.3.4
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Conference paperLaser Induced Periodic Surface Structured c-Si Solar Cell with more than 16% efficiency
The European Conference on Lasers and Electro-Optics doi:10.1109/CLEO/Europe-EQEC52157.2021.9592657
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ArticleEffect of amorphous SiC layer on electrical and optical properties of Al/a-SiC/c-Si Schottky diode for optoelectronic applications
Journal of Materials Science: Materials in Electronics doi:10.1007/s10854-021-06570-6
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ArticleOn the application of hole‐selective MoOx as full‐area rear contact for industrial scale p‐type c‐Si solar cells
Progress in Photovoltaics: Research and Applications doi:10.1002/pip.3363
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ArticleOn the electrical and charge conduction properties of thermally evaporated MoOx on n- and p-type crystalline silicon
Journal of Materials Science: Materials in Electronics doi:10.1007/s10854-020-04884-5