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Maximum Power Test (Double-Sided PV Panels)
Test system for measuring IV characteristics under IEC 60904-compliant illumination
Solar cell efficiency measurement on an industrial size
Test conditions: AM1.5G @ 25°C
Solar Cell efficiency measurement under flash light
Non-commercial samples, suitable for R&D-type samples such as tandem, shingled, small-sized, and novel materials
Quantitative Analysis of Cross-Linking Percentages in Encapsulant-Containing Samples Using Chemical Testing Methods
Quantitative Analysis of Cross-Linking Percentages in Encapsulant-Containing Samples Using Chemical Testing Methods
Thermophysical property measurement at room temperature with the transient plane source method
MEASUREMENT TECHNIQUE: At room temperature, the transient plane source (TPS) sensor is placed in contact with the sample and subjected to a brief electrical current, generating a heat pulse. The sensor simultaneously measures temperature rise, allowing the calculation of thermal…
Testing service for grid connection standards EN 50549-1:2019 and IEC 61727:2014
Consultancy and testing services in compliance with international standards (e.g., EN 50549-1:2019, IEC 61727:2014) for inverter grid connection requirements
Maximum Power Test (Single-Sided PV Panels)
Test system for measuring IV characteristics under IEC 60904-compliant illumination
Current-voltage measurement in A+ Condition for thin-film solar cells
A+ conditions would be applied
Thermophysical property measurement at high temperatures with the transient plane source method
MEASUREMENT TECHNIQUE: High-temperature measurements are conducted using an integrated specialized furnace systems and heat-resistant TPS sensors. Once the sample reaches the target temperature, the transient plane source method is applied. Based on the temperature rise over…
Provision of grid emulator, three-channel PV emulator, and electronic load with a power limitation of 27 kVA
Provision of grid emulator, three-channel PV emulator, and AC/DC electronic load with 27 kVA power limitation (9 kW limitation for both single-phase and three-phase operation, non-isolated 3-channel PV emulator)
18 kWe Solar Simulator use for concentrated solar energy applications
MEASUREMENT TECHNIQUE: Measurements are conducted using focused Xenon short-arc lamps, providing a high-intensity irradiation level of 1000 kW/m². Thermocouples are utilized as the primary measurement instruments to accurately monitor heat transfer and material behavior…
External Quantum Efficiency (EQE)
Measurement of quantum efficiency of solar cells with monochromatic illumination
Standard Test Condition (STC) Performance Test (Double-Sided PV Panels)
System for IV measurement of bifacial PV modules under illumination
Provision of 1500 V power supply utilization service
Utilization of 1500 V power supply (Chroma 1500 V 18 kW unidirectional and ITECH 1500 V 18 kW bidirectional power supplies)
Toplam ve dağınık (difüz) geçirgenlik
Determination of total and diffuse transmittance properties of materials with monochromatic illumination
Standard Test Condition (STC) Performance Test (Single Sided PV Panels)
System for IV measurement of monofacial PV modules under illumination
Measurement of metal contact resistance of solar cells
Including sample preparation
Toplam ve dağınık (difüz) yansıma
Determination of total and diffusive reflection properties of materials with monochromatic illumination
Temperature Coefficient Measurement Test
System integrated with a temperature-controlled chamber for IV characterization at various temperatures
Electroluminescence Imaging (EL) (Solar Panel)
Electroluminescence device for detecting microcracks and defects in PV cells at the module level
Determination of structural and morphological features from the surface and interface by high resolution scanning electron microscopy
Scanning electron microscopy (SEM): High-resolution imaging of structural and morphological features at sub-micron to nanoscale dimensions, including cross-sectional analysis of solar cells.
Outdoor tests of photovoltaic modules
Outdoor PV module testing system equipped with MPPT-based IV tracer, irradiance, temperature, humidity, and wind sensors. Enables long-term monitoring, degradation and yield analysis, and performance data reporting in compliance with IEC 61215, IEC 61724-1, and IEC 61853 series.
Scanning Electron Microscopy (SEM)
Determination of structural and morphological features from the surface and interface by high resolution scanning electron microscopy
Energy Dispersive Spectroscopy 5-point sampling (EDS)
Surface composition analysis mapping by Energy Dispersive Spectroscopy of scanning electron beam
Thermal Imaging
Enables detection of temperature distribution on PV modules for hot spot analysis.
Contact Angle Measurement System
Evaluation of the surface wettability of perovskite thin films, providing insights into morphology, coating quality, and interfacial interactions
Energy Dispersive Spectroscopy Mapping (EDS)
Surface composition analysis mapping by Energy Dispersive Spectroscopy of scanning electron beam
Glint and glare analysis
Enables detection of temperature distribution on PV modules for hot spot analysis.max. 50 unit/day and min. 20 unit/day
Spectroscopic Ellipsometery (SE)
Optical properties measurement of absorber materials
Vacuum lamination of PV module layers
Lamination of layers such as glass, cells, encapsulant, and backsheet under vacuum and heat.
Mechanical Profilometer
Horizontal and vertical dimension measurement of structures on the surface of solar cells
Precision laser cutting and scribing
High-precision scribing and cutting using a fiber laser system.
Micro-Scalling Optical Microscope
Micron scaling and photographing the surface
Raman Spektrometresi
Structure and phase analysis by Raman spectroscopy method
Fourier Transform Infrared spectroscopy (FTIR)
Molecular bond analysis of materials with mid-infrared light
cryogenic I-V measurement (IVT) for Activation energy calculation
Doping Activation Energy Measurement by Current-Voltage Measurement at Cryogenic Temperatures
Room Temperature Photoluminescence (RT-PL)
Band gap and Defect analysis with the effect of Photoluminescence at room Temperatures
Cryogenic-FTIR
Interstitial Oxygen and Carbon Content Concentration Analysis of Materials by Infrared Ray Absorbtion
Atomic Force Microscopy (AFM)
Surface topography roughness measurements with high resolution atomic force microscopy
Cryogenic Photoluminescence Spectrometer (Cryo-PL)
Defect analysis with the effect of Photoluminescence at Cryogenic Temperatures with 325, 532 and 618nm lasers
Time of Flight-Secondary Ion Mass Spectroscopy (ToF-SIMS)
Surface-to-depth measurement of material contents with a ppm/ppb accuracy
X-ray photoelectron spectroscopy (XPS)
Determination of the content of the material and the bonds between atoms with one-thousandth precision
Deep Level Transient Spectroscopy (DLTS)
Measurement of deep defects by excitation-induced electrical behavior of the semiconductors
Room Temp. Electron Paramagnetic Resonance (RT-EPR/ESR)
Room-Temperature Measurement of defects by the behavior of electrons in the material
Nuclear Magnetic Resonance (NMR)
Measurement of structures and chemical properties of material by Core Magnetic interaction
Electrochemical Capacitance-Voltage (ECV) measurement
Including sample preperation
Determination of charge carrier lifetime depending on temperature
25-200°C (5 tempertaure values)
Cryogenic Electron Paramagnetic Resonance (Cryo-EPR/ESR)
Cryogenic Temperature Measurement of defects by the behavior of electron spin resonance in the material
Lamination Leak Detection with Fluorescent Agent
Detection of gaps caused by lamination defects in panels using a fluorescent agent
Mono Si wafer Surface texturing (forming Pyramid structures on the surface)
Including consumables, excluding wafers
SixNy and SiOxNy deposition on silicon wafer surface
Including consumables, excluding wafers
Al2O3 coating on Si wafer surface (<10nm)
Including consumables, excluding wafers
Zn:Al coating on Si wafer surface (<10nm)
Including consumables, excluding wafers
Oxidation of Si surface by thermal method
Including consumables, excluding wafers
Cutting, ablation and marking processes
M2 and G1 wafer sizes can be processed. Metal-contaminated samples are not processed.
Low irradiance performance test (for bifacial panels)
The module is measured at a temperature of (25 ± 2) °C and an irradiance of (200 ± 20) W/m² in accordance with IEC 60904-1. The irradiance level is adjusted according to IEC 60904-10 to maintain the spectral distribution.
Suns-Voc measurement
Determination of open circuit voltage (Voc) value on solar cells
Low irradiance performance test (for monofacial panels)
The module is measured at a temperature of (25 ± 2) °C and an irradiance of (200 ± 20) W/m² in accordance with IEC 60904-1. The irradiance level is adjusted according to IEC 60904-10 to maintain the spectral distribution.